WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
Small Signal MOSFET
310 mAmps, 60 Volts
Features
FM120-M
2N7002ELT1
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
N–Channel SOT–23
•
MAXIMUM RATINGS
data
Mechanical
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward
Pb-Free package is available
voltage drop.
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Unit
V
dc
V
dc
mAdc
0.031(0.8) Typ.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
Rating
•
Epoxy : UL94-V0 rated flame retardant
Symbol Value
Drain–Source Voltage
V
DSS
60
•
Case : Molded plastic, SOD-123H
,
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
60
•
Terminals :Plated terminals, solderable
V
DGR
per MIL-STD-750
Drain Current
Method 2026
– Continuous T
C
= 25°C
cathode
•
Polarity : Indicated by
(Note 1.)
band
– Continuous
–
Pulse t
Position
•
Mounting
< 10us
: Any
I
D
I
DM
310
1200
310 mAMPS
60 VOLTS
0.040(1.0)
0.024(0.6)
R
DS(on)
= 1.5
W
V
GS(th)
= 1.8
V
N - Channel
3
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
•
Weight : Approximated 0.011 gram
Gate–Source Voltage
±20
– Continuous
V
GS
MAXIMUM RATINGS AND ELECTRICAL
– Non–repetitive (tp
≤
50
µs)
V
GSM
±40
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
Vpk
Vdc
1
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
THERMAL CHARACTERISTICS
Maximum RMS Voltage
Characteristic
Maximum DC Blocking Voltage
2
MARKING DIAGRAM
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
Symbol
V
DC
P
D
I
O
I
FSM
R
θJA
12
20
14
Max
20
225
1.8
13
30
21
Unit
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
&
18
PIN ASSIGNMENT
10
115
80
100
150
Drain
56
70
3
105
80
100
150
120
200
140
200
Volts
Volts
Volts
Amps
Total Device Dissipation FR–5 Board
Maximum Average Forward Rectified Current
(Note 2.) T
A
= 25°C
Derate above 25°C
superimposed on rated load (JEDEC method)
mW
mW/°C
°C/W
mW
mW/°C
801
Peak Forward Surge Current 8.3 ms single half sine-wave
Gate
1
Thermal Resistance, Junction to Ambient
556
300
2.4
Total Device Dissipation
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Alumina Substrate,(Note 3.) TA = 25°C
Typical Junction Capacitance (Note 1)
Derate above 25°C
Storage
Thermal Resistance, Junction to Ambient
Temperature Range
P
D
R
ΘJA
C
J
T
J
R
θJA
TSTG
-55 to +125
417
°C/W
-
65
to +175
801
= Device Code
W
= Work Week
-55 to +150
Source
2
Amps
℃/W
PF
℃
℃
W
Junction and Storage Temperature
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
+150
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.70
0.5
10
ORDERING INFORMATION
0.85
0.9
0.92
T
J,
T
stg
–o 5 to
5
°C
NOTES:
V
F
0.50
1. The Power Dissipation of the package may result in a lower continuous drain
Maximum
current.
Reverse Current at @T A=25℃
Average
I
R
Rated
2. FR–5 = 1.0 x 0.75 x 0.062 in.
@T A=125℃
DC Blocking Voltage
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Volts
mAmps
Device
2N7002ELT1
Marking
801
Shipping
3000 Tape & Reel
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
