WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order
ELECTRICAL
TYPICAL
to
optimize board space.
•
Low power loss, high efficiency.
current capability, low forward voltage drop.
•
High
2.0
surge capability.
•
High
1.8
T
A
= 25°C
•
Guardring for overvoltage protection.
V
GS
= 10 V
high-speed switching.
•
Ultra
1.6
1.4
•
Silicon epitaxial planar chip, metal silicon junction.
9V
•
Lead-free parts meet environmental standards of
1.2
8V
MIL-STD-19500 /228
1.0
•
RoHS product for packing code suffix "G"
7V
Halogen free product for packing code suffix "H"
0.8
6V
Mechanical data
0.6
5V
•
Epoxy : UL94-V0 rated flame retardant
0.4
Small Signal MOSFET 115 mAmps,60 Volts
Features
FM120-M
THRU
2N7002DW1T1
FM1200-M
Pb Free Product
Package outline
CHARACTERISTICS
1.0
V
DS
= 10 V
0.8
0.6
0.4
0.2
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-o55C
°
0.071(1.8)
0.056(1.4)
25°C
125°C
I
D
, DRAIN CURRENT (AMPS)
:
•
Case
0.2
Molded plastic, SOD-123H
4V
3 V
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0
I
D
, DRAIN CURRENT (AMPS)
0.031(0.8) Typ.
•
Figure 1. Ohmic Region
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
r
DS(on) ,
STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.0 2.0 3.0 4.0 5.0
6.0
7.0 8.0
Method 2026
V DRAIN SOURCE VOLTAGE (VOLTS)
Polarity : Indicated
DS,
cathode band
by
0
9.0
10
0
1.0
Dimensions in inches and (millimeters)
2.0 3.0 4.0
5.0
6.0 7.0 8.0
V
GS,
GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
V
GS(th),
THRESHOLD VOLTAGE (NORMALIZED)
2.4
Ratings at 25℃ ambient temperature unless otherwise specified.
2.2
Single phase half wave,
= 10 V
resistive of inductive load.
V
GS
60Hz,
2.0
For capacitive load, derate current by 20%
I
D
= 200 mA
1.8
Marking Code
1.6
Maximum RMS Voltage
1.2
Maximum DC Blocking Voltage
1.0
Maximum Average Forward Rectified Current
0.8
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.2
1.1
1.10
1.0
14
0.95
40
28
0.9
40
0.85
1.05
V
DS
= V
GS
I
D
= 1.0 mA
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1.4
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
Volts
Volts
Volts
Amps
0.8
0.75
-o60
0.6
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on
0.4
rated load (JEDEC method)
Amps
+o20
+o60
+o100
R
ΘJA
T, TEMPERATURE (°C)
Typical Junction Capacitance (Note 1)
C
J
Figure 3. Temperature versus Static
-55 to +125
Operating Temperature Range
T
J
Typical Thermal Resistance (Note 2)
Storage Temperature Range
-o60
-o20
0.7
+o140
Drain–Source On–Resistance
TSTG
-o20
+o20
+o60
40
T, TEMPERATURE (°C)
120
-55
versus
Figure 4. Temperature
to +150
Gate
Threshold Voltage
-
65
to +175
+o100
℃/W
PF
℃
℃
+o140
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
