WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
the material of product are Halogen Free and
•
We declare that
•
Low power loss, high efficiency.
compliance with RoHS requirements.
•
High current capability, low forward voltage drop.
•
ESD Protected:1000V
•
High surge capability.
•
Pb-Free package is available
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
packing code suffix ”G”
RoHS product for
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing
•
Lead-free parts meet environmental standards of
code suffix “H”
MIL-STD-19500 /228
•
RoHS product for
RATINGS
suffix "G"
MAXIMUM
packing code
Halogen free product for packing code suffix "H"
Rating
Symbol
Value
Unit
Mechanical data
Drain−Source Voltage
V
DSS
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
MW)
Drain−Gate Voltage (R
GS
= 1.0
V
DGR
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Drain Current
I
D
60
60
±
115
±
75
±
800
Vdc
Vdc
0.031(0.8) Typ.
mAdc
Small Signal MOSFET 115 mAmps,60 Volts
Features
FM120-M
THRU
2N7002DW1T1
FM1200-M
Pb Free Product
Package outline
SOD-123H
N–Channel SOT-363
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
D
2
2
G
1
0.040(1.0)
0.024(0.6)
1
1
0.031(0.8) Typ.
S
•
•
•
− Continuous
2026
25°C (Note 1)
Method
T
C
=
− Continuous
T = 100°C (Note 1)
Polarity : Indicated by
C
cathode band
− Pulsed (Note 2)
Mounting Position : Any
Gate−Source Voltage
Weight
−
Approximated 0.011 gram
:
Continuous
− Non−repetitive (t
p
≤
50
ms)
I
DM
I
D
Dimensions in inches and (millimeters)
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
S
2
G
2
D
1
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
4
5
6
THERMAL CHARACTERISTICS
RATINGS
Characteristic
Total Device Dissipation
Per Device
Maximum RMS Voltage
Board (Note 1)
FR−5
T
A
=
Voltage
Maximum DC Blocking
25°C
Derate Above 25°C
Marking Code
Maximum Recurrent Peak Reverse Voltage
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Symbol
SYMBOL
FM120-M
Max
Unit
12
13
14
15
16
18
10
115
120
P
D
380
mW
20
30
40
50
60
80
100
150
200
Volts
V
RRM
250
ORDERING INFORMATION
140
Volts
14
21
28
35
42
56
70
105
V
RMS
V
DC
Maximum Average Forward Rectified Current
Peak Forward Surge Current
to Ambient
half sine-wave
Junction
8.3 ms single
superimposed on rated load (JEDEC method)
Thermal Resistance,
R
qJA
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
20
3.0
30
40
mW/°C
50
328
−55 to +150
°C/W
°C
80
Device
1.0
2N7002DW1T1
30
40
120
60
100
Marking
150
200
Shipping
Volts
Amps
702
3000 Tape & Reel
Amps
℃/W
PF
℃
℃
Typical Thermal Resistance (Note 2)
Temperature Range
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Junction and Storage
T
J
, T
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
