WILLAS
Small Signal MOSFET
30V,0.56A,
RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Single, SOT-23
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
THRU
2N4003NLT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.6
V
DS
≥
10 V
SOD-123H
better reverse leakage current and thermal resistance.
1.6
surface
V to 5 V
•
Low profile
V
GS
= 10
mounted application in order to
optimize board space.
4.5 V
•
Low power loss, high efficiency.
1.2
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
high-speed switching.
•
Ultra
0.8
4V
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.4
3.5 V
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
2.5 V
Mechanical data
0
1
0
•
Epoxy : UL94-V0 rated flame retardant
I
D,
DRAIN CURRENT (A)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (A)
1.2
0.146(3.7)
0.130(3.3)
T
J
= −55°C
0.012(0.3) Typ.
0.8
T
J
= 25°C
0.071(1.8)
0.056(1.4)
T
J
= 125°C
0.4
2
0
0
3
0.024(0.6)
4
2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
0.031(0.8) Typ.
0.040(1.0)
5
0.031(0.8) Typ.
Figure 2. Transfer Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1
0.8
0.6
0.4
15
50
35
16
60
42
Dimensions in inches and (millimeters)
Method 2026
10
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
8
•
Weight : Approximated 0.011 gram
I
D
= 0.2 A
V
GS
= 10 V
T
J
= 125°C
6
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
J
= 25°C
T
J
= −55°C
18
10
80
100
56
70
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
4
load, derate current by 20%
RATINGS
Marking Code
2
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
12
20
14
13
30
21
4
30
14
0.2
40
28
0
40
115
150
105
0.5
150
120
200
140
0.6
200
Volts
Volts
Volts
Amps
Amps
℃/W
PF
℃
℃
0
Maximum RMS Voltage
3.2
V
DC
3.6
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Maximum Average Forward Rectified Current
I
O
Figure 3. On−Resistance vs.
Gate−to−Source
Peak Forward Surge Current 8.3 ms single half sine-wave
Voltage
I
FSM
superimposed on rated load (JEDEC method)
2.4
Maximum DC Blocking Voltage
2.8
0
50
0.1
60
0.2
80
0.3
100
0.4
I
D,
1.0
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
30
Temperature
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
(NORMALIZED)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
1.80
R
ΘJA
C
J
T
J
TSTG
I
D
= 0.3 A
Operating Temperature Range
= 4.5 V
V
GS
1.60
-55 to +125
1000
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
40
120
-55 to +150
-
65
to +175
1.40
1.20
1.00
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
T
J
= 150°C
0.85
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
I
R
100
0.70
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
0.80
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
T
J
= 125°C
2- Thermal Resistance From Junction to Ambient
0.60
−25
−50
0
25
50
75
100
125
150
10
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
