WILLAS
Small Signal MOSFET
30V,0.56A, Single, SOT-23
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
Features
•
Ultra high-speed switching.
•
Low Gate Voltage Threshold(Vgs(th))to Facilitate
•
Silicon epitaxial planar chip, metal silicon junction.
•
Low Gate Charge for Fast Switching
•
Lead-free parts meet environmental standards of
•
ESD Protected Gate
MIL-STD-19500 /228
•
Minimum Breakdown Voltage Rating of 30 V
•
RoHS product for packing code suffix "G"
Halogen free
package is available
suffix "H"
•
Pb-Free
product for packing code
FM120-M
THRU
2N4003NLT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Gate ESD Protection, N−Channel
Drive Circuit Design
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
RoHS product for packing code suffix ”G”
Halogen free
rated flame retardant
•
Epoxy : UL94-V0
product for packing code suffix “H”
•
Case : Molded plastic, SOD-123H
Applications
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Level Shifters
Method 2026
•
Level Switches
•
Polarity : Indicated by cathode band
•
Low Side Load Switches
•
Mounting Position : Any
•
Portable Applications
•
Weight : Approximated 0.011 gram
0.040(1.0)
SOT-23
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Drain
3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Drain−to−Source Voltage
V
DSS
For capacitive load, derate current by 20%
Gate−to−Source Voltage
V
GS
Marking Code
Current (Note 1)
Gate 1
Value
30
±20
0.5
13
0.37
30
0.69
21
30
0.56
Unit
V
V
A
14
40
40
A
2
Source
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
3
Drain
115
150
105
150
120
200
140
200
Continuous Drain
RATINGS
Maximum Recurrent Peak Reverse Voltage
Steady
State
T
A
= 25°C
T
A
= 85°C
V
RRM
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
I
D
12
20
20
I
D
Volts
Volts
Volts
Amps
Power Dissipation
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
DC
Continuous Drain
t < 10 s T
A
= 25°C
Maximum Average Forward Rectified Current
I
O
Current (Note 1)
T
A
=
85°C
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Power Dissipation
t<5s
superimposed on rated load (JEDEC method)
(Note 1)
Typical Thermal Resistance (Note 2)
R
ΘJA
Pulsed Drain Current
1)
t
p
= 10
ms
C
J
Typical Junction Capacitance (Note
(Note 1)
Steady State
V
RMS
P
D
14
W
28
MARKING DIAGRAM
0.40
P
D
I
DM
T
J
,
Tstg
I
S
0.83
W
A
TR8
Amps
℃/W
PF
℃
℃
1.7
-55
−55
+125
°C
to
to
150
2
Gate
to +150
Source
-55
= Specific Device Code
= Month Code
0.85
0.9
0.92
1
Operating Junction
Operating Temperature Range
and Storage Temperature
T
J
Storage Temperature Range
TSTG
-
65
to +175
TR8
M
0.70
Source Current (Body Diode)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Lead Temperature for Soldering Purposes
V
F
(1/8” from case for 10 s)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
1.0
A
T
L
260
0.50
°C
M
@T
Functional operation above the Recommended
Rated DC Blocking Voltage
Ratings are stress ratings only.
A=125℃
NOTES:
I
Stresses exceeding Maximum Ratings may
R
damage the device. Maximum
ORDERING INFORMATION
0.5
Package
SOT−23
Shipping
Volts
mAmps
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
10
Device
2N4003NLT1
3000/Tape & Reel
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
qJA
R
qJA
R
qJA
Max
180
150
300
Unit
°C/W
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
