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WCSS0418V1F 参数 Datasheet PDF下载

WCSS0418V1F图片预览
型号: WCSS0418V1F
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18的同步3.3V高速缓存RAM [256K x 18 Synchronous 3.3V Cache RAM]
分类和应用:
文件页数/大小: 18 页 / 645 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCSS0418V1F
Pin Configurations
(continued)
119-Ball BGA
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
b
NC
V
DDQ
NC
DQ
b
V
DDQ
NC
DQ
b
V
DDQ
DQ
b
NC
NC
NC
V
DDQ
2
A
CE
2
A
NC
DQ
b
NC
DQ
b
NC
V
DD
DQ
b
NC
DQ
b
NC
DQP
b
A
A
NC
3
A
A
A
V
SS
V
SS
V
SS
BW
b
V
SS
NC
V
SS
V
ss
V
SS
V
SS
V
SS
MODE
A
NC
4
ADSP
ADSC
V
DD
NC
CE
1
OE
ADV
GW
V
DD
CLK
NC
BWE
A1
A0
V
DD
NC
NC
5
A
A
A
V
SS
V
SS
V
SS
V
ss
V
SS
NC
V
SS
BW
a
V
SS
V
SS
V
SS
V
SS
A
NC
6
A
CE
3
A
DQP
a
NC
DQ
a
NC
DQ
a
V
DD
NC
DQ
a
NC
DQ
a
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQ
a
V
DDQ
DQ
a
NC
V
DDQ
DQ
a
NC
V
DDQ
NC
DQ
a
NC
ZZ
V
DDQ
Pin Descriptions
Name
ADSC
I/O
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-Clock
Input-
Synchronous
Description
Address Strobe from Controller, sampled on the rising edge of CLK. When asserted LOW, A
[17:0]
is captured in the address registers. A
[1:0]
are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
Address Strobe from Processor, sampled on the rising edge of CLK. When asserted LOW, A
[17:0]
is captured in the address registers. A
[1:0]
are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE
1
is deasserted HIGH.
A
1
, A
0
address inputs, These inputs feed the on-chip burst counter as the LSBs as well as being
used to access a particular memory location in the memory array.
Address Inputs used in conjunction with A
[1:0]
to select one of the 256K address locations. Sampled
at the rising edge of the CLK, if CE
1
, CE
2
, and CE
3
are sampled active, and ADSP or ADSC is
active LOW.
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes. Sampled on the
rising edge. BWS
0
controls DQ
[7:0]
and DP
0
, BWS
1
controls DQ
[15:8]
and DP
1
. See Write Cycle
Descriptions table for further details.
Advance input used to advance the on-chip address counter. When LOW the internal burst counter
is advanced in a burst sequence. The burst sequence is selected using the MODE input.
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be
asserted LOW to conduct a byte write.
Global Write Input, active LOW. Sampled on the rising edge of CLK. This signal is used to conduct
a global write, independent of the state of BWE and BWS
[1:0]
. Global writes override byte writes.
Clock input. Used to capture all synchronous inputs to the device.
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE
2
and CE
3
to select/deselect the device. CE
1
gates ADSP.
ADSP
A
[1:0]
A
[17:2]
BWS
[1:0]
ADV
BWE
GW
CLK
CE
1
Document #: 38-05245 Rev. **
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