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WCSN0436V1P-100AI 参数 Datasheet PDF下载

WCSN0436V1P-100AI图片预览
型号: WCSN0436V1P-100AI
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流水线SRAM与NOBL TM架构 [128Kx36 Pipelined SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 285 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCSN0436V1P
Switching Characteristics
Over the Operating Range
[13, 14, 15]
-166
Parameter
t
CYC
t
CH
t
CL
t
AS
t
AH
t
CO
t
DOH
t
CENS
t
CENH
t
WES
t
WEH
t
ALS
t
ALH
t
DS
t
DH
t
CES
t
CEH
t
CHZ
t
CLZ
t
EOHZ
t
EOLZ
t
EOV
Description
Clock Cycle Time
Clock HIGH
Clock LOW
Address Set-Up Before CLK
Rise
Address Hold After CLK Rise
Data Output Valid After CLK
Rise
Data Output Hold After CLK
Rise
CEN Set-Up Before CLK Rise
CEN Hold After CLK Rise
GW, BWS
[3:0]
Set-Up Before
CLK Rise
GW, BWS
[3:0]
Hold After CLK
Rise
ADV/LD Set-Up Before CLK
Rise
ADV/LD Hold after CLK Rise
Data Input Set-Up Before CLK
Rise
Chip Enable Set-Up Before
CLK Rise
Chip Enable Hold After CLK
Rise
Clock to High-Z
[12, 14, 15, 16]
Clock to Low-Z
[12, 14, 15, 16]
14, 15, 16]
6.6
2.5
2.5
1.5
0.5
-143
7.0
2.8
2.8
2.0
0.5
-133
7.5
3.0
3.0
2.0
0.5
-100
10
4.0
4.0
2.2
0.5
-80
12.5
4.0
4.0
2.5
1.0
ns
ns
ns
ns
ns
7.0
1.5
2.5
1.0
2.5
1.0
2.5
1.0
2.5
1.0
2.5
1.0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5.0
7.0
0
ns
ns
ns
ns
7.0
ns
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
5.0
1.4
1.4
1.5
0.5
3.5
1.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
3.2
3.0
0.0
3.2
0
3.5
1.5
1.5
3.0
0
4.0
3.2
3.8
1.5
2.0
0.5
2.0
0.5
2.0
0.5
1.7
0.5
2.0
0.5
1.5
1.5
4.0
1.5
2.0
0.5
2.0
0.5
2.0
0.5
1.7
0.5
2.0
0.5
3.5
4.0
0
1.5
1.5
4.2
1.5
2.2
0.5
2.2
0.5
2.2
0.5
2.0
0.5
2.2
0.5
3.5
4.2
0
4.2
1.5
1.5
5.0
Data Input Hold After CLK Rise 0.5
1.5
0.5
1.5
1.5
3.5
5.0
1.5
1.5
OE HIGH to Output High-Z
[12,
OE LOW to Output Low-Z
[12,
OE LOW to Output Valid
[14]
5.0
Notes:
14. t
CHZ
, t
CLZ
, t
OEV
, t
EOLZ
, and t
EOHZ
are specified with A/C test conditions shown in part (a) of AC Test Loads. Transition is measured
±
200 mV from steady-state
voltage.
15. At any given voltage and temperature, t
EOHZ
is less than t
EOLZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
16. This parameter is sampled and not 100% tested.
Document #: 38-05246 Rev. **
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