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WCMA1008U1X 参数 Datasheet PDF下载

WCMA1008U1X图片预览
型号: WCMA1008U1X
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用:
文件页数/大小: 12 页 / 235 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCMA1008U1X
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
Typ
10%
GND
Rise Time: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall time: 1 V/ns
Equivalent to:
OUTPUT
THÉVENIN EQUIVALENT
R
TH
V
TH
Parameters
R1
R2
R
TH
V
TH
3.3V
1213
1378
645
1.75
Unit
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
t
CDR[3]
t
R[4]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery
Time
V
CC
= 2V, CE
1
V
CC
– 0.3V,
CE
2
< 0.3V
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
0
t
RC
Conditions
Min.
1.6
0.4
20
Typ.
Max.
Unit
V
µA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
1.8V
t
CDR
V
DR
> 1.6V
1.8V
t
R
CE
Note:
4. Full Device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100
µ
s or stable at V
CC(min.)
>
100
µ
s.
4