WCFS4016V1C
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
DC Input Voltage
................................ –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V
CC
3.3V
±
0.3V
.... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
....................................–0.5V to V
CC
+ 0.5V
DC Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
GND < V
I
< V
CC
GND < V
OUT
< V
CC
, Output Disabled
V
CC
= Max., f = f
MAX
=
1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Comm’l
Comm’l
Test Conditions
Min.
V
CC
= Min.,
I
OH
= –4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
2.0
–0.3
–1
–1
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
85
40
12ns
Max.
Unit
V
V
V
V
µA
µA
mA
mA
I
SB2
10
mA
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Note:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
2
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
