WCFS1008C3E
WCFS1008C9E
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
.................................–0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V
CC
5V
±
10%
to V
CC
+ 0.5V
Electrical Characteristics
Over the Operating Range
Test Conditions
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
Output Short
Circuit Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE
1
> V
IH
or CE
2
< V
IL
,
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE
1
> V
CC
– 0.3V,
or CE
2
< 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
V
CC
= Min.,
I
OH
= –4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
2.2
–0.3
–1
–5
WCFS1008C3E
WCFS1008C9E 15ns
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+5
–300
80
Max.
Unit
V
V
V
V
µA
µA
mA
mA
I
SB1
40
mA
I
SB2
10
mA
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
9
8
Unit
pF
pF
Note:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the case temperature.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
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WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
