WCFS1008V1C
AC Test Loads and Waveforms
R1 480 Ω
ALL INPUT PULSES
90%
10%
R1 480 Ω
3.3V
3.3V
OUTPUT
3.0V
GND
90%
10%
OUTPUT
R2
R2
255 Ω
30 pF
5 pF
255 Ω
≤ 3 ns
≤ 3 ns
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
(b)
(a)
THÉ
Equivalent to:
VENIN EQUIVALENT
167 Ω
1.73V
OUTPUT
Switching Characteristics[4] Over the Operating Range
WCFS1008V1C 12ns
Parameter
Description
Min.
12
3
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address to Data Valid
12
tOHA
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z[5, 6]
CE LOW to Low Z[6]
CE HIGH to High Z[5, 6]
CE LOW to Power-Up
CE HIGH to Power-Down
tACE
12
6
tDOE
tLZOE
0
3
0
tHZOE
6
6
tLZCE
tHZCE
tPU
tPD
12
WRITE CYCLE[7, 8]
tWC
tSCE
tAW
tHA
Write Cycle Time
12
9
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
8
0
tSA
0
tPWE
tSD
8
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z[6]
6
tHD
0
tLZWE
3
tHZWE
WE LOW to High Z[5, 6]
6
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
OL/IOH and 30-pF load capacitance.
I
5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD
.
3
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
