WCFS1008V1C
Current into Outputs (LOW) ........................................ 20 mA
Maximum Ratings
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Latch-Up Current..................................................... >200 mA
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Ambient
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V
Range
Temperature[2]
VCC
DC Voltage Applied to Outputs
Commercial
0°C to +70°C
3.3V 10%
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
WCFS1008V1C 12ns
Parameter
VOH
Description
Test Conditions
VCC = Min.,
IOH = – 4.0 mA
Min.
Max.
Unit
Output HIGH Voltage
2.4
V
VOL
VIH
Output LOW Voltage
Input HIGH Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
V
2.2
VCC
+ 0.3
VIL
IIX
Input LOW Voltage[1]
Input Load Current
–0.3
–1
0.8
+1
+5
V
GND < VI < VCC
µA
µA
IOZ
Output Leakage
Current
GND < VI < VCC
,
–5
Output Disabled
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
160
20
5
mA
mA
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
ISB2
Automatic CE
Max. VCC,
Power-Down Current
—CMOS Inputs
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
pF
CIN
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
6
8
COUT
pF
Notes:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. TA is the “Instant On” case temperature.
3. Tested initially and after any design or process changes that may affect these parameters.
2
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
