WCFS0808C1E
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
.................................... –0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
................................ –0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient Temperature
[2]
0
°
C to +70
°
C
V
CC
5V
±
10%
Electrical Characteristics
Over the Operating Range
[3]
WCFS0808C1E 12ns
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Load
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down
Current— TTL
Inputs
Automatic CE
Power-Down
Current— CMOS
Inputs
GND < V
I
< V
CC
GND < V
O
< V
CC
,
Output Disabled
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Com’l
Test Conditions
V
CC
= Min., I
OH
=–4.0 mA
V
CC
= Min., I
OL
=8.0 mA
2.2
–0.5
–5
–5
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
160
2.2
–0.5
–5
–5
Max.
WCFS0808C1E 15ns
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
155
Max.
Unit
V
V
V
V
µA
µA
mA
I
SB1
Com’l
Max. V
CC
,
CE > V
IH
,
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Com’l
Max. V
CC
,
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V, f = 0
30
30
mA
I
SB2
10
10
mA
]
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. Tested initially and after any design or process changes that may affect these parameters.
Page 2 of 10
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
