WF4M32-XXX5
White Electronic Designs
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 5ꢀ0V, TA = -55°C TO +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
tCS
100
120
150
ns
ns
ChipSelectSetupTime
WriteEnablePulseWidth
AddressSetupTime
tELWL
0
0
0
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tWP
tAS
45
0
50
0
50
0
ns
ns
DataSetupTime
tDS
45
15
45
20
50
15
50
20
50
15
50
20
ns
Data Hold Time
tDH
tAH
tWPH
ns
AddressHoldTime(1)
WriteEnablePulseWidthHigh(2)
DurationofByteProgrammingOperation(3)
SectorErase(4)
ns
ns
300
15
300
15
300
15
µs
sec
µs
µs
sec
sec
ns
Read Recovery Time before Write
VCC Setup Time
tGH
W
L
0
0
0
tVCS
50
50
50
ChipProgrammingTime
ChipEraseTime(5)
44
44
44
256
256
256
OutputEnableHoldTime(6)
RESETPulseWidth
tOEH
10
10
10
tRP
500
500
500
ns
NOTES:
1. A21 must be held constant until WE or CS go high, whichever occurs first.
2. Guaranteed by design, but not tested.
3. Typical value for tWHWH1 is 7µs.
4. Typical value for tWHWH2 is 1sec.
5. Typical value for Chip Erase Time is 32sec.
6. For Toggle and Data Polling.
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES READ-ONLY OPERATIONS
(VCC = 5ꢀ0V, TA = -55°C TO +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
100
120
150
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
tAVQV
tELQV
tACC
tCE
100
100
50
120
120
50
150
150
55
Chip Select Access Time
OutputEnabletoOutputValid
ChipSelectHightoOutputHighZ
OutputEnableHightoOutputHighZ
tGLQV
tEHQZ
tGHQZ
tAXQX
tOE
tDF
40
45
45
tDF
40
45
45
OutputHoldfromAddresses,CSorOEChange,
whicheverisFirst
tOH
0
0
0
RSTLowtoReadMode
tReady
20
20
20
µs
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520