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W3H64M72E-400SBCF 参数 Datasheet PDF下载

W3H64M72E-400SBCF图片预览
型号: W3H64M72E-400SBCF
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX72, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 30 页 / 942 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3H64M72E-XSBX  
White Electronic Designs  
ADVANCED*  
READ COMMAND  
ꢀhe READ command is used to initiate a burst read access  
to an active row. ꢀhe value on the BA2–BA0 inputs selects  
the bank, and the address provided on inputsA0–i (where  
i = A9) selects the starting column location. ꢀhe value on  
input A10 determines whether or not auto precharge is  
used. If auto precharge is selected, the row being accessed  
will be precharged at the end of the READ burst; if auto  
precharge is not selected, the row will remain open for  
subsequent accesses.  
FIGURE 11 – READ COMMAND  
READ OPERATION  
CK#  
CK  
READ bursts are initiated with a READ command. ꢀhe  
starting column and bank addresses are provided with the  
READ command and auto precharge is either enabled or  
disabled for that burst access. If auto precharge is enabled,  
the row being accessed is automatically precharged at the  
completion of the burst. If auto precharge is disabled, the  
row will be left open after the completion of the burst.  
CKE  
CS#  
RAS#  
CAS#  
During READ bursts, the valid data-out element from the  
starting column address will be available READ latency  
(RT) clocks later. RT is defined as the sum of AT and CT;  
RT = AT + CT. ꢀhe value for AT and CT are programmable  
via the MR and EMR commands, respectively. Each  
subsequent data-out element will be valid nominally at  
the next positive or negative clock edge (i.e., at the next  
crossing of CK and CK#).  
WE#  
ADDRESS  
Col  
ENABTE  
A10  
DQS/DQS# is driven by the DDR2 SDRAM along with  
output data. ꢀhe initial TOW state on DQS and HIGH state  
on DQS# is known as the read preamble (tRPRE). ꢀhe  
TOW state on DQS and HIGH state on DQS# coincident  
with the last data-out element is known as the read  
postamble (tRPSꢀ).  
AUꢀO PRECHARGE  
BANK ADDRESS  
DISABTE  
Bank  
DON’ꢀ CARE  
Upon completion of a burst, assuming no other commands  
have been initiated, the DQ will go High-Z.  
Data from any READ burst may be concatenated with  
data from a subsequent READ command to provide a  
continuous flow of data. ꢀhe first data element from the  
new burst follows the last element of a completed burst.  
ꢀhe new READ command should be issued x cycles after  
the first READ command, where x equals BT / 2 cycles.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 1  
18  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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