White Electronic Designs
Symbol
A
0
- A
25
DQ
0
- DQ
15
CE
1
, CE
2
OE
WE
RDY/BSY(*)
Type
INPUT
INPUT/OUTPUT
INPUT
INPUT
INPUT
OUTPUT
Name and Function
PCMCIA Flash Memory Card
FLV Series
C
ARD
S
IGNAL
D
ESCRIPTION
ADDRESS INPUTS:
A
0
through A
25
enable direct addressing of up to 64MB of memory on the
card. Signal A
0
is not used in word access mode. A
25
is the most significant bit
DATA INPUT/OUTPUT:
DQ
0
THROUGH DQ
15
constitute the bi-directional databus. DQ
15
is the MSB.
CARD ENABLE 1 AND 2:
CE
1
enables even byte accesses, CE
2
enables odd byte accesses.
Multiplexing A
0
, CE
1
and CE
2
allows 8-bit hosts to access all data on DQ
0
- DQ
7
.
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
WRITE ENABLE:
Active low signal gating write data to the memory card.
READY/BUSY OUTPUT:
Indicates status of internally timed erase or program algorithms. A high
output indicates that the card is ready to accept accesses. A low output indicates that one or more
devices in the memory card are busy with internally timed erase or write activities.
CARD DETECT 1 and 2:
Provide card insertion detection. These signals are internally connected
to ground on the card. The host shall monitor these signals to detect card insertion (pulled-up on
host side).
WRITE PROTECT:
Write protect reflects the status of the Write Protect switch on the memory
card. WP set to high = write protected, providing internal hardware write lockout to the Flash
array. If card does not include optional write protect switch, this signal will be pulled low internally
indicating write protect = off.
PROGRAM/ERASE POWER SUPPLY:
Provides programming voltages for card. Not connected for
3.3V/5V only card.
CARD POWER SUPPLY:
5.0V for all internal circuitry
CARD GROUND
INPUT
INPUT
OUTPUT
OUTPUT
OUTPUT
ATTRIBUTE MEMORY SELECT :
Active low signal, enables access to attribute memory space,
occupied by the Card Information Structure (CIS) and Card Registers.
RESET:
Active high signal for placing card in Power-on default state. Reset can be used as a
Power-Down control for the memory array.
WAIT:
This signal is pulled high internally for compatibility. No wait states are generated.
BATTERY VOLTAGE DETECT:
These signals are pulled high to maintain SRAM card compatibility.
VOLTAGE SENSE:
Notifies the host socket of the cards V
CC
requirements. VS
1
and VS
2
are
open to indicate a 5V card .
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
pin may be driven or left floating
CD
1
, CD
2
OUTPUT
WP
OUTPUT
V
PP
1
, V
PP
2
V
CC
GND
REG
RST
WAIT
BVD
1
, BVD
2
VS
1
, VS
2
RFU
NC
N.C.
(*) Signals not supported by FLV51-FLV58 (NC)
F
UNCTIONAL
T
RUTH
T
ABLE
READ function
Function Mode
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
H
H
H
L
L
H
L
L
L
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
Odd-Byte
Odd-Byte
X
Even-Byte
Odd-Byte
Even-Byte
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte
X
Even-Byte
X
CE
2
H
H
H
L
L
CE
1
H
L
L
L
H
A
0
X
L
H
X
X
OE
X
L
L
L
L
WE
X
H
H
H
H
REG
X
H
H
H
H
Common Memory
D
15
-D
8
High-Z
High-Z
High-Z
Odd-Byte
Odd-Byte
D
7
-D
0
High-Z
Even-Byte
Odd-Byte
Even-Byte
High-Z
REG
X
L
L
L
L
Attribute Memory
D
15
-D
8
High-Z
High-Z
High-Z
Not Valid
Not Valid
D
7
-D
0
High-Z
Even-Byte
Not Valid
Even-Byte
High-Z
White Electronic Designs Corporation Marlborough, MA (508) 485-4000
4
WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
