PCMCIA Flash Memory Card
FEA Series
DC Characteristics (1)
Symbol Parameter
Notes
Typ(3) Max Units Test Conditions
ICCR VCC Read Current
20
35
mA
VCC = 5.25V
tcycle = 125ns
S5 components
SA components
SA components
S5 components
SA components
SA components
S5 components, 2)
SA components, 2)
ICCW VCC Program Current
75
30
30
50
30
30
100
mA
mA
mA
mA
mA
mA
10
10
IPPW VPP Program Current
VPP = VPPH
VCC = 5.25V
ICCE VCC Block Erase Current
10
IPPE VPP Block Erase Current
ICCS VCC Standby Current
10
50
A
µ
100
A
µ
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#.
3. Typical: VCC = 5V, T = +25°C.
AC Characteristics (1)
VCC = 5V ± 5%, TA = 0°C to + 70°C
100ns
150ns
Min
SYM
tC(R)
Parameter
Min
Max
Max
Unit
ns
Read Cycle Time
100
150
ta(A)
Address Access Time
Card Enable Access Time
Output Enable Access Time
Write Cycle Time
100
100
50
150
150
75
ns
ta(CE)
ta(OE)
tcW
ns
ns
100
60
150
80
ns
tW(WE)
Write Pulse Width
ns
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Data Write and Erase Performance (1,3)
VCC = 5V ± 5%, TA = 0°C to + 70°C
SYM
Parameter
Notes
2
Min
Typ(1)
8µs
Max
3ms
Units
sec
Test Conditions
tWHQV1 Word/Byte Program time
tEHQV1
tWHQV2 Block Program Time
tEHQV2
2
0.4
2.1
10
Word Program Mode
Block Erase Time
2
0.6
sec
sec
Full Chip Erase Time
2, 4
38.4
Notes:
1. Typical: Nominal voltages and TA = 25°C.
2. Excludes system overhead.
3. Valid for all speed options.
4. Chip erase time based on 8 Mbit Flash components.
August 2000 Rev. 3 - ECO #13123
4
PC Card Products
WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
