TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/ 2/
-55°C
≤
T
C
≤
+125°C
V
SS
= 0 V dc
+4.5 V dc
≤
V
CC
≤
+5.5 V dc
unless otherwise specified
Group A
subgroups
Device
types
Min
Limits
Max
Unit
Data retention characteristics
Data retention supply
voltage
Data retention current
V
DR
CS
≥
V
CC
- 0.2 V dc
V
CC
= 3 V dc
01-10
01-04
05-10
19,20
Capacitance
OE capacitance 4/
WE
1-4 capacitance 4/
1,2,3
1,2,3
2.0
5.5
1.6
28
32
V
mA
I
CCDR1
C
OE
C
WE
C
CS
C
I/O
C
AD
V
IN
= 0 V dc, f = 1.0 MHz,
T
A
= +25°C
V
OUT
= 0 V dc, f = 1.0 MHz,
T
A
= +25°C
V
IN
= 0 V dc, f = 1.0 MHz,
T
A
= +25°C
V
OUT
= 0 V dc, f = 1.0 MHz,
T
A
= +25°C
V
OUT
= 0 V dc, f = 1.0 MHz,
T
A
= +25°C
4
All
50
pF
4
All
20
pF
CS capacitance 4/
D
0-31
capacitance 4/
A
0-16
capacitance 4/
Functional tests
Functional tests
4
All
20
pF
4
All
20
pF
4
All
50
pF
See 4.3.1c
7,8A,8B
All
Read cycle timing characteristics
Read cycle timing
t
RC
See figure 4
9,10,11
01
02
03
04
05,11
06,12
07,13
08,14
09,15
10,16
17,19
18,20
120
100
85
70
55
45
35
25
20
17
15
12
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
SIZE
A
REVISION LEVEL
R
5962-94611
SHEET
7
DSCC FORM 2234
APR 97
WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
