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VG4632321AQ-45R 参数 Datasheet PDF下载

VG4632321AQ-45R图片预览
型号: VG4632321AQ-45R
PDF下载: 下载PDF文件 查看货源
内容描述: 524,288x32x2位CMOS同步图形RAM [524,288x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用: 内存集成电路
文件页数/大小: 81 页 / 1954 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG4632321A  
524,288x32x2-Bit  
CMOS Synchronous Graphic RAM  
VIS  
-5 Version (Calculation with t = 5ns ~ 30ns)  
CK  
Clock period  
(t  
t
t
t
t
t
t
RCD  
RC  
RP  
RRD  
RAS  
RSC  
)
CK  
55ns  
15ns  
10ns  
40ns  
10ns  
15ns  
30ns  
20ns  
15ns  
10ns  
5ns  
2
3
1
1
1
2
3
1
1
1
1
2
2
2
3
4
8
1
1
1
1
2
1
1
1
2
3
4
6
11  
-5.5 Version (Calculation with t = 5.5ns ~ 30ns)  
CK  
Clock period  
(t  
t
t
t
t
t
t
RCD  
RC  
RP  
RRD  
RAS  
RSC  
)
CK  
56.5ns  
16.5ns  
11ns  
40ns  
11ns  
16.5ns  
30ns  
20ns  
15ns  
10ns  
5.5ns  
2
3
1
1
2
2
3
1
1
1
2
2
2
2
3
4
8
1
1
1
2
2
1
1
2
2
3
4
6
11  
-6 Version (Calculation with t = 6ns ~ 30ns)  
CK  
Clock period  
(t  
t
t
t
t
t
t
RCD  
RC  
RP  
RRD  
RAS  
RSC  
)
CK  
60ns  
18ns  
12ns  
42ns  
12ns  
18ns  
30ns  
20ns  
15ns  
10ns  
6ns  
2
3
1
1
2
2
3
1
1
1
2
2
2
3
3
5
7
1
1
1
2
2
1
1
2
2
3
4
6
10  
-7 Version (Calculation with t = 7ns ~ 30ns)  
CK  
Clock period  
(t  
t
t
t
t
t
t
RCD  
RC  
RP  
RRD  
RAS  
RSC  
)
CK  
62ns  
20ns  
14ns  
42ns  
14ns  
20ns  
30ns  
20ns  
15ns  
10ns  
7ns  
3
4
1
1
2
2
3
1
1
1
2
2
2
3
3
5
6
1
1
1
2
2
1
1
2
2
3
5
7
10  
11. Power up Sequence  
Power up must be performed in the following sequence.  
1) Power must be applied to V and V (simultaneously) when all input signals are held “NOP”  
DD  
DDQ  
state and CKE = ”H”, DQM = ”H”. The CLK signal must be started at the same time.  
2) After power-up, a pause of 200u secouds minimum is required. Then, it is recommended that  
DQM is held “high” (V levels) to ensure DQ output to be in the high impedance.  
DD  
3) Both banks must be precharged.  
4) Mode Register Set command must be asserted to initialize the Mode register.  
5) A minimum of 8 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of  
the device. Sequence of 4 and 5 may be changed.  
Document:  
Rev.1  
Page25  
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