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VG36648041CT 参数 Datasheet PDF下载

VG36648041CT图片预览
型号: VG36648041CT
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 70 页 / 948 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG36648041CT  
CMOS Synchronous Dynamic RAM  
VIS  
10.2 PRECHARGE TERMINATION  
10.2.1 PRECHARGE TERMINATION in READ Cycle  
During READ cycle, the burst read operation is terminated by a precharge command. When the  
precharge command is asserted, the burst read operation is terminated and precharge starts.  
The same bank can be activated again after t from the precharge command.  
RP  
When CAS latency is 2,the read data will remain valid until one clock after the precharge com-  
mand.  
When CAS latency is 3, the read data will remain valid until two clocks after the precharge com-  
mand.  
Precharge Termination in READ Cycle  
Burst lengh= X  
T8  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
Read  
PRE  
Q2  
ACT  
Command  
CAS latency=2  
Hi-Z  
Q0  
Q3  
tRP  
DQ  
Q1  
command  
Read  
PRE  
ACT  
Hi-Z  
tRP  
CAS latency=3  
DQ  
Q0  
Q3  
Q2  
Q1  
Document : 1G5-0153  
Rev.1  
Page26  
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