Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VIS
Read and Write Cycle (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
CS
RAS
CAS
WE
BS
RAa
A10
CAa
CAb
RAa
CAc
ADD
DQM
DQ
Hi-Z
DAb0 DAb1
QAc0
QAc1
DAb3
QAa3
QAc3
QAa0 QAa1
QAa2
Write
Command
Bank A
Read
Command
Bank A
The Write Data
Activate
Command
Bank A
Read
Command
Bank A
The Read Data
is Masked with
a Two Clock
Latency
is Masked with a
Zero Clock
Latency
Document : 1G5-0127
Rev2
Page51