Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VIS
AC Parameters for Read Timing (2 of 2)
Burst Length=2, CAS Latency=3
T0
T1 T2
T3
T4 T5
T6
T7 T8
T9 T10 T11 T12 T13 T14 T15
CLK
t
t
t
CH
CL
CK3
Begin Auto
Precharge
t
CKE
CS
CMS
t
(Bank D)
Bank B
CKS
t
t
CMH
CKH
RAS
CAS
WE
BS
A10
t
AH
AS
t
ADD
t
RRD
t
t
RAS
RP
t
RC
DQM
t
t
t
AC3
HZ
AC3
t
t
t
t
t
OH
OH
RCD
LZ
HZ
Hi-Z
QBa0
QBa1
QAa0
QAa1
DQ
Read with
Precharge
Command
Bank A
Activate
Command
Bank A
Activate
Activate
Command
Bank A
Read
Command
Bank A
Auto Precharge
Command
Command
Bank B
(Bank D)
Bank B
(Bank D)
Document : 1G5-0127
Rev2
Page33
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
