VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
Auto Precharge after Write Burst (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS
t
CK3
Start Auto Precharge
Bank B
High
Start Auto
Precharge
Bank A
Start Auto Precharge
Bank B
RAS
CAS
WE
*BS0
Ra
Ra
Rb
Rb
Ra
A10
Ca
RBb
Ca
Cb
Ra
Cb
ADD
DQM
Hi-Z
QBb3
QBa0
QAb0
DQ
QAa3
QBa1 QBa2 QBa3
QAb1 QAb2 QAb3
Activate
QBb0 QBb1 QBb2
QAa0 QAa1
Activate
QAa2
Write with
Auto precharge
Command
Activate
Command
Bank A
Write with
Write with
Auto Precharge
Command
Bank A
Command
Bank B
Auto Precharge
Command
Bank B
Command
Bank B
Bank B
Write
Command
Bank A
* BS1=”L”, Bank C,D = Idle
Document :1G5-0177
Rev.2
Page59
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
