VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
Auto Precharge after Write Burst (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t
CK2
Start Auto Precharge
Bank B
High
Start Auto Precharge
Bank B
Start Auto Precharge
Bank A
CS
RAS
CAS
WE
*BS0
Ra
Ra
Rb
Rb
Rc
Rc
Ra
A10
Ca
Ca
Cb
Cb
Cc
Ra
ADD
DQM
Hi-Z
QBa0 QBa1 QBa2
QAb0 QAb1 QAb2
QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QAc2 QAc3
QAb3
QAa3
QBa3
QAa0 QAa1
Write
Command
Bank A
QAa2
DQ
Start Auto
Precharge
Bank A
Activate
Command
Bank A
Activate
Command
Bank A
Write with
Write with
Auto Precharge
Command
Bank B
Activate
Command
Bank B
Activate
Auto Precharge
Command
Bank A
Command
Bank B
Write with
Auto Precharge
Bank A
Write with
Auto Precharge
Command
Bank B
* BS1=”L”, Bank C,D = Idle
Document :1G5-0177
Rev.2
Page58
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
