Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VIS
Ordering information
Part Number
Cycle time
7ns
Package
400mil
VG36646141BT-7
VG36646141BT-8
VG36646141BT-10
8ns
54-Pin
10ns
Plastic TSOP
VG36648041BT-8
• VG
• 36
• VIS Memory Product
• Technology/Design Rule
• 64Mb
• 64
• 16
• 4
• Device Configuration, 16: x4
• Device Infernal Banks
• Interface Type, 1: LVTTL
• Mask/Design Version
• 1
• B
• T
• 8
• Package Type, T: TSOP
• Cycle time, 10: 10ns, 8: 8ns, 7: 7ns
Packaging Information
• 400mil, 54-Pin Plastic TSOP
RAD R1
RAD R1
MILLIMETERS
MILLIMETERS
INCHES
INCHES
DIM
DIM
RAD R
RAD R
MIN.
MIN.
NOM.
NOM.
MAX.
MAX.
MIN.
MIN.
NOM.
NOM.
MAX.
MAX.
54
54
28
28
---
---
---
---
1.20
1.20
---
---
---
---
0.047
0.047
A
A
A2
A2
A1
A1
0.05
0.05
---
---
0.15
0.15
0.002
0.002
---
---
0.006
0.006
B
B
1.05
1.05
A2
A2
0.95
0.95
1.00
1.00
0.037
0.037
0.039
0.039
0.041
0.041
c
c
0.45
0.45
---
---
b
b
0.30
0.30
---
---
0.012
0.012
0.018
0.018
B
B
0.40
0.40
---
---
b1
b1
0.30
0.30
---
---
0.012
0.012
0.016
0.016
L
L
A1
A1
E1
E1
0¢X~5¢X
0¢X~5¢X
0.21
0.21
---
---
c
c
0.12
0.12
---
---
0.005
0.005
0.008
0.008
DETAIL A
DETAIL A
0.16
0.16
---
---
0.006
0.006
c1
c1
0.12
0.12
---
---
0.005
0.005
0.880
0.880
D
D
22.09
22.09
22.22
22.22
22.35
22.35
0.870
0.870
0.875
0.875
ZD
ZD
0.71 REF.
0.71 REF.
0.028 REF.
0.028 REF.
b
b
e
e
0.80 BASIC
0.80 BASIC
0.0315 BASIC
0.0315 BASIC
SECTION B-B
SECTION B-B
b1
b1
E
E
11.56
11.56
11.76
11.76
11.96
11.96
0.455
0.463
0.471
0.471
0.455 0.463
1
1
27
27
D
D
E1
E1
10.03
10.03
10.16
10.16
10.29
10.29
0.395
0.395 0.400
0.400
0.405
0.405
c
c
c1
c1
L
L
0.40
0.40
0.50
0.50
0.60
0.60
0.016
0.020
0.024
0.024
0.016 0.020
R
R
0.12
0.12
---
---
0.25
0.25
0.005
---
0.010
0.010
0.005 ---
BASE METAL
BASE METAL
R1
R1
0.12
0.12
---
---
---
---
0.005
---
---
---
0.005 ---
WITH PLATING
WITH PLATING
DETAIL A
DETAIL A
NOTE:
NOTE:
ZD
ZD
1. CONTROLLING DIMENSION : MILLIMETERS
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
A
A
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
e
e
E
E
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
b
b
SEATING PLANE
SEATING PLANE
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
0.100(0.004")
0.100(0.004")
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
Document : 1G5-0127
Rev2
Page70
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
