VIS
Basic Features and Function Description
1.Simplified State Diagram
Preliminary
VG36256401A
VG36256801A
VG36256161A
CMOS Synchronous Dynamic RAM
Self
Refresh
try
en
it
ex
LF
SE
Mode
Register
Set
MRS
IDLE
LF
SE
REF
AUTO
Refresh
CK
E
CK
E
Power
Down
ROW
ACTIVE
BS
T
ACT
CKE
CKE
Active
Power
Down
T
BS
Au Write
to p
rec with
har
ge
e
rit
W
Write (Write recovery)
Re
ad
h
wit rge
ad cha
Re Pre
to
Au
e
rit
W
ry
ve
co
re
Read
WRITE
SUSPEND
CKE
CKE
WRITE
Read (write recovery)
Write
R
Auto ead w
Prec ith
harg
e
Write with
Auto Precharge
ith
ge
ad w
char
Re
Pre
uto
(wri
A
t
e re
cove
ry)
PRE
READ
CKE
CKE
READ
SUSPEND
Read with
Auto Precharge
ter
min
atio
n)
Pre
E(
PR
WRITEA
SUSPEND
CKE
CKE
WRITEA
CKE
READA
CKE
READA
SUSPEND
POWER
ON
Precharge
Precharge
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state.
Document : 1G5-0155
PR
E(
Pre
c
Rev.1
har
ge
rge
cha
n)
atio
min
ter
Page 8
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
