Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
VIS
Full Page Read Cycle (2 of 2)
Burst Length=Full Page, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t
CK3
High
CS
RAS
CAS
WE
A11(BS)
RAa
RBb
A10
RBa
A0~A9
CBa
RAa
RBa
CAa
RBb
t
RP
DQM
DQ
Hi-Z
QBa+3
QBa+4
QBa+5
QAa-2
QAa+1
QBa+1
QBa+2
QAa+2
QAa
QBa0
QAa QAa+1
QAa-1
Read
Full page burst operation
does not teminate when
Read
Command
Bank A
Activate
Activate
Command
Bank A
Precharge
Command
Bank B
Activate
Command
Bank B
Command
Bank B
Command
Bank B
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Burst Stop
Command
Document:1G5-0160
Rev.1
Page 61
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
