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VSC8116 参数 Datasheet PDF下载

VSC8116图片预览
型号: VSC8116
PDF下载: 下载PDF文件 查看货源
内容描述: ATM / SONET / SDH 622 /为155Mb / s的收发器复用/解复用,集成时钟发生器 [ATM/SONET/SDH 622/155Mb/s Transceiver Mux/Demux with Integrated Clock Generation]
分类和应用: 时钟发生器异步传输模式ATM
文件页数/大小: 20 页 / 361 K
品牌: VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
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VITESSE  
SEMICONDUCTOR CORPORATION  
Data Sheet  
ATM/SONET/SDH 622/155Mb/s Transceiver  
Mux/Demux with Integrated Clock Generation  
VSC8116  
Table 11: PECL and TTL Inputs and Outputs  
Parameters  
Description  
Min  
Typ  
Max  
Units  
Conditions  
Input HIGH  
voltage (TTL)  
VIH  
2.0  
5.5  
V
Input LOW  
voltage (TTL)  
VIL  
IIH  
IIL  
0
50  
0.8  
500  
-500  
V
Input HIGH  
current (TTL)  
2.0V< VIN < 5.5V,  
Typical@2.4V  
µA  
µA  
Input LOW  
current (TTL)  
-0.5V < VIN < 0.8V  
Power Dissipation  
Table 12: Power Supply Currents (Outputs Open)  
Parameter  
Description  
Power supply current from VDD  
Power dissipation  
Typ  
(Max)  
Units  
IDD  
PD  
231  
0.8  
346  
1.2  
mA  
W
(1)  
Absolute Maximum Ratings  
Power Supply Voltage (VDD) Potential to GND .................................................................................-0.5V to +4V  
DC Input Voltage (PECL inputs)............................................................................................ -0.5V to V +0.5V  
DD  
DC Input Voltage (TTL inputs) ......................................................................................................... -0.5V to 5.5V  
DC Output Voltage (TTL Outputs)........................................................................................ -0.5V to V + 0.5V  
DD  
Output Current (TTL Outputs)................................................................................................................. +/-50mA  
Output Current (PECL Outputs)................................................................................................................+/-50mA  
o
o
Case Temperature Under Bias.........................................................................................................-55 to +125 C  
o
o
Storage Temperature.....................................................................................................................-65 C to +150 C  
Maximum Input ESD (Human Body Model).............................................................................................. 1500 V  
Note: Caution: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing  
permanent damage. Functionality at or exceeding the values listed is not implied. Exposure to these values for extended  
periods may affect device reliability.  
Recommended Operating Conditions  
Power Supply Voltage (VDD) .................................................................................................................+3.3V±5 %  
o
o
Commercial Operating Temperature Range* (T).................................................................................. 0 to 70 C  
o
o
Extended Operating Temperature Range* (T) .................................................................................... 0 to 115 C  
o
o
Industrial Operating Temperature Range* (T) ................................................................................... -40 to 85 C  
* Lower limit of specification is ambient temperature and upper limit is case temperature.  
Page 12  
VITESSE SEMICONDUCTOR CORPORATION  
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896  
G52220-0, Rev 4.1  
1/8/00