VSC8115
Data Sheet
S
PECIFICATIONS
DC Characteristics
Over Recommended Operating Conditions.
Table 2. LVPECL Single-Ended Inputs/Outputs
Symbol
V
IH
V
IL
I
IH
I
IL
V
OL
V
OH
Parameter
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
Output LOW Voltage
Output HIGH Voltage
Min
V
DD
– 1.125
V
DD
– 2.0
–0.5
–0.5
V
DD
– 2.0
V
DD
– 1.25
Typ
Max
V
DD
– 0.5
V
DD
– 1.5
10
10
V
DD
– 1.8
V
DD
– 0.67
Units
V
V
µA
µA
V
V
Condition
Guaranteed input
HIGH voltage.
Guaranteed input LOW
voltage.
V
IN
= V
DD
– 0.5V.
V
IN
= V
DD
– 2.0V.
50Ω to (V
DD
– 2.0V).
50Ω to (V
DD
– 2.0V).
Table 3. LVPECL Differential Inputs
Symbol
V
IH
V
IL
∆V
IN
I
IH
I
IL
Parameter
Input HIGH Voltage
Input LOW Voltage
Differential Input Voltage
Input HIGH Current
Input LOW Current
Min
V
DD
– 1.75
V
DD
– 2.0
250
–0.5
–0.5
10
10
Typ
Max
V
DD
– 0.4
V
DD
– 0.7
Units
V
V
mV
µA
µA
∆V
IN
= 0.5V.
∆V
IN
= 0.5V.
Condition
Guaranteed input HIGH
voltage.
Guaranteed input LOW
voltage.
Table 4. LVDS Differential Outputs
Symbol
V
OCM
Parameter
Output Common-Mode Voltage
Min
1.0
Typ
1.35
Max
1.7
Units
V
Condition
100Ω PAD to PADN.
Single-ended peak-to-
peak.
100Ω PAD to PADN.
Single-ended peak-to-
peak.
∆V
OUT
Differential Output Swing
350
500
850
mV
Table 5. LVPECL Differential Outputs
Symbol
V
OCM
∆V
OUT
Parameter
Output Common-Mode Voltage
Differential Output Swing
Min
0.8
400
Typ
1.35
Max
1.7
850
Units
V
mV
Condition
50Ω to (V
DD
– 2.0V).
50Ω to (V
DD
– 2.0V).
4 of 12
G52272, Rev 4.2
5/14/03
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
