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VSC8021 参数 Datasheet PDF下载

VSC8021图片预览
型号: VSC8021
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5Gb / s的SONET兼容的8位复用器/解复用器芯片组 [2.5Gb/s SONET-Compatible 8-Bit MUX/DEMUX Chipset]
分类和应用: 解复用器
文件页数/大小: 17 页 / 214 K
品牌: VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
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VITESSE  
SEMICONDUCTOR CORPORATION  
Data Sheet  
2.5Gb/s SONET-Compatible  
8-Bit MUX/DEMUX Chipset  
VSC8021/VSC8022  
Figure 5: SONET Frame Structure  
STS-3 Frame  
STS-48 Frame  
125µs  
125µs  
3 x 90 Bytes  
48 x 90 Bytes  
3 x 3 Bytes  
3 x 48 Bytes  
3 A1s  
3 A2s 3 C1s  
48 A1s 48 A2s 48 C1s  
9 Rows  
9 Rows  
DATA  
DATA  
STS-3 Envelope  
Capacity  
STS-48 Envelope  
Capacity  
Transport  
Overhead  
Transport  
Overhead  
A1s and A2s: SONET Framing Sequence  
C1s: STS Frame ID  
High-Speed Inputs  
In the past, the high-speed inputs, which are typically used for serial data and high-speed clock inputs with  
frequencies greater than 1GHz, were specified with absolute minimum and maximum voltage values. Since  
these inputs are intended for AC-coupled applications, they have been re-specified in terms of a voltage swing  
(V ).  
IN  
High-speed clocks are intended for AC-coupled operation. In most situations high-speed serial data will  
have high transition density and contain no DC offsets, making them candidates for AC-coupling as well. How-  
ever, it is possible to employ DC-Pcoupling when the serial input data contains a DC component.  
The structure of the high-speed input circuit is shown in Figure 6. DC-coupled circuits may be used to oper-  
ate this input provided that the input swing is centered around the reference voltage. It is recommended that, in  
single-ended DC-coupling situations, the user provide an external reference which has better temperature and  
power supply rejection than the simple on-chip voltage divider. This external reference should have a nominal  
value of -3.5V and can be connected to the complementary input. This complication can be avoided in DC-cou-  
pled situations by using differential signals.  
Figure 6: High-Speed Input Circuit Structure  
Chip Boundary  
VCC  
= GND  
150 pF  
-3.5 V  
-3.5 V  
R
1k•  
50•  
150 pF  
VTT  
VTT  
VEE  
= -5.2V  
G52028-0, Rev 4.1  
05/25/01  
Page 9  
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012  
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  
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