VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
VSC7991
Absolute Maximum Ratings(1)
Negative Power Supply Voltage (V )..............................................................................................V to −8.0V
SS
CC
All Pins ................................................................................................................................................V to + .5V
SS
Supply Voltage (V ) ......................................................................................................................................... 8V
SS
Supply Current (I ).................................................................................................................................... 500mA
SS
Input Voltage (V )........................................................................................................................................ −2.0V
IN
Output Voltage (V
)................................................................................................................................. −4.0V
OUT
Modulation Control Voltage (V ).........................................................................................................V − 0.5V
IP
SS
Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V
Output Offset Control Current (I ) .............................................................................................................. 50mA
IB
Maximum Junction Temperature Range ..................................................................................... −55°C to +125°C
Storage Temperature Range: ....................................................................................................... −55°C to +125°C
Note:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND).............................................................................................................................. 0V
Negative Voltage Rail (V )...........................................................................................................−6.5V to −7.2V
SS
Operational Case Temperature (T ) ...................................................................................................0°C to 75°C
C1
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
G52321-0, Rev 2.3
02/26/01
Page 3
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Internet: www.vitesse.com
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