VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
SONET/SDH 10.7Gb/s
Laser Diode Driver
VSC7990
AC Characteristics (Over recommended operating conditions)
Table 1: High-Speed Inputs and ECL Outputs
Symbol
Parameter
Min
Typ
Max
Units
Conditions
VIN
VIN
Single-ended Input Voltage Swing
On-Chip Terminations
400
35
1000
65
mVp-p VCM = −3.7V
Ω
Table 2: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
RL = 25Ω, 20% to 80%,
tR, tF
Output Rise and Fall Times
35
ps
20mA < IMOD < 100mA
tSU
tH
Data to Clock Setup Time
Hold Time
TBD
TBD
ps
ps
DC Characteristics (Over recommended operating conditions)
Table 3: Power Dissipation
Symbol
Parameter
Min
Typ
Max Units
Conditions
IVSS
PD
Power Supply Current (VSS
Total Power Dissipation
)
150
800
mA
VSS = −5.5V, IMOD = IBIAS = 0mA
VSS = −5.5V, IMOD = IBIAS = 0mA
mW
Table 4: Laser Driver DC Electrical Specifications
Symbol
Parameter
Min
Typ
Max
Units
Conditions
IBIAS
IMOD
VIB
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
2
1
100
100
mA
mA
V
VSS+2.1V
VSS+2.1V
IBIAS = 60mA
IMOD= 100mA
VSS = −5.2V
VIP
Laser Modulation Control Voltage
Output Voltage Compliance
V
VOCM
GND −3V
V
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 2
G52303-0, Rev 2.2
04/05/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
