VITESSE
SEMICONDUCTOR CORPORATION
SONET/SDH 10.7Gb/s
Laser Diode Driver
Advance Product Information
VSC7990
AC Characteristics
(Over recommended operating conditions)
Table 1: High-Speed Inputs and ECL Outputs
Symbol
V
IN
V
CM
V
IN
Parameter
Single-ended Input Voltage Swing
Differential Input Common Mode Range
On-Chip Terminations
Min
400
−2.3
35
Typ
Max
1000
−1.3
65
Units
mVp-p
V
Ω
Conditions
V
CM
=
−3.7V
V
SS
=
−5.2V
Table 2: Laser Driver AC Electrical Specifications
Symbol
t
R
, t
F
t
SU
t
H
Parameter
Output Rise and Fall Times
Data to Clock Setup Time
Hold Time
Min
Typ
Max
35
Units
ps
ps
ps
Conditions
R
L
= 25Ω, 20% to 80%,
20mA < I
MOD
< 100mA
TBD
TBD
DC Characteristics
(Over recommended operating conditions)
Table 3: Power Dissipation
Symbol
I
VSS
P
D
Parameter
Power Supply Current (V
SS
)
Total Power Dissipation
Min
Typ
Max
150
800
Units
mA
mW
Conditions
V
SS
=
−5.5V,
I
MOD
= I
BIAS
= 0mA
V
SS
=
−5.5V,
I
MOD
= I
BIAS
= 0mA
R
L
= 25Ω to GND.
Table 4: Laser Driver DC Electrical Specifications
Symbol
I
BIAS
I
MOD
V
IB
V
IP
V
OCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min
2
1
Typ
GND
−3V
Max
100
100
V
SS
+2.1V
V
SS
+2.1V
Units
mA
mA
V
V
V
Conditions
I
BIAS
= 60mA
I
MOD
= 100mA
V
SS
=
−5.2V
Table 5: MUX Select Logic Table
SEL
V
SS
GND (V
DD
)
N/C
Mode Select
Clocked Data In
Non-clocked Data In
Non-Clocked Data In
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52303-0, Rev 2.0
12/15/00
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
