VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
3.125Gb/s Integrated Transimpedance
and Limiting Amplifier with Signal Detect
VSC7969
Bare Die Descriptions
Figure 1: Pad Assignments
1467µm (57.2mil)
Pad 6
VOUTN
Pad 7
SD_OUT
Pad 8
GND
Pad 9
VOUTN
Pad 10
GND
Pad 11
VOUTP
Pad 12
GND
Pad 13
IMON
Pad 14
VOUTP
Pad 5
SD_ADJ
Pad 15
GND
Pad 4
SD_TP
Pad 16
CSDN
1143µm
(45.0mil)
Pad 3
GND
Pad 17
CSDP
VSC7969
Pad 2
BG_VREF
Pad 18
GND
Pad 1
GND
Pad 19
GND
Pad 26
VCCD
Pad 25
VCCS
Pad 24
GND
Pad 23
IN
Pad 22
FILTER
Pad 21
GND
Pad 20
GND
Die Size: 1143µm x 1453µm (45.0mil x 57.2mil)
Die Thickness: 279µm (11.0mil)
Pad Size: 100µm x 100µm (3.9mil x 3.9mil)
Pad Passivation Opening: 86µm x 86µm (3.4mil x 3.4mil)
Scribe Size: 143µm (5.6mil)
143µm
(5.6mil)
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 4
G52355-0, Rev 2.0
02/09/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
