VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
3.125Gb/s Integrated Transimpedance
and Limiting Amplifier with Signal Detect
VSC7969
Symbol
Parameter
Min
Typ
Max Units
Conditions
Slope of Linear Analog Photocurrent
Monitor vs Input Optical Power
0Ω to 2kΩ to VCC with a detector
responsitivity of 0.8A/W
MON
DC
0.8
µA/µW
Duty Cycle
-5
5
+5
200
10
%
µA
µA
ps
IMONRANGE Photocurrent Monitor Linearity Range
IMONOFFSET Photocurrent Monitor Offset
0
RJ
DJ
Random Jitter(2)
Deterministic Jitter(3)
TBD
TBD
Peak-to-peak
Peak-to-peak
ps
NOTES: (1) The transimpedance gain is defined as Z = (∆V
)/∆I . (2) Using 1111100000 pattern at 2.5Gb/s to measure the
PH
T
OUT - DIFF
standard deviation of the edge of the pattern, multiply the standard deviation by 14 to achieve the total random jitter. (3) +K28.5
- K28.5 (00111110101100000101).
Table 2: DC Specifications
Symbol
Parameter
Negative Supply Rail
Min
Typ
Max Units
Conditions
GND
VCCS
VCCD
ICC
0
3.3
V
Positive Supply Rail for 3.3V Operation
Positive Supply Rail for 5V Operation
Power Supply Current
3.0
4.5
3.6
5.5
75
V
V
5.0
65
mA
3.3V
VCCS
125mV
-
Applicable to VOUTP and
VOUTN pins at 50Ω load.
VOUT-CM
VANODE
VCATHODE
VCAT-EXT
VAPD
Common-Mode Voltage on Output Pins
Internal DC Bias Voltage on Detector
Anode Contact
0.8
0.9
1.0
VCCS
10
V
V
V
V
Interal DC Bias Voltage on Detector
Cathode Contact
VCCS -
0.15V
External DC Bias Voltage Permissable
on Detector Cathode Contact
3.3
60
External DC Bias Voltage for Use with
Avalanche Photodetector
Absolute Maximum Ratings(1) (at TA = +25°C, unless otherwise specified)
Power Supply Voltage (V
Power Supply Voltage (V
)......................................................................................................................... 3.6V
CCS
) ........................................................................................................................ 5.5V
CCD
Junction Temperature Range ........................................................................................................-40°C to +125°C
Storage Temperature Range .........................................................................................................-40°C to +125°C
Relative Ambient Humidity ................................................................................................................. 85%/+85°C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Supply (V
Positive Voltage Supply (V
)...................................................................................................................... 3.3V
CCS
)...................................................................................................................... 5.0V
CCD
Negative Voltage Rail (GND) ............................................................................................................................ 0V
(1)
Ambient Temperature Range (T ) ..............................................................................................-40°C to +85°C
A
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
G52355-0, Rev 2.0
02/09/01
Page 3
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
