VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7927
Table 5: High Speed Inputs and ECL Outputs
Symbol
V
IN
V
CM
V
OH
V
OL
V
IN
SONET/SDH 2.5Gb/s Laser Diode Driver
Parameter
Single-ended Input Voltage Swing
Differential Input Common Mode Range
ECL Output High Voltage
ECL Output Low Voltage
On-Chip Terminations
Min
300
-2.3
-1200
Typ
—
—
—
—
—
Max
1500
-1.3
Units
mVp-p
V
mV
mV
Ω
Conditions
V
CM
= -2.0V
V
SS
= -5.2V
50Ω to -2.0V
50Ω to -2.0V
—
-1600
65
—
35
Table 6: Power Dissipation
Symbol
I
VSS
P
D
Parameter
Power Supply Current (VSS)
Total Power Dissipation
Min
—
—
Typ
—
—
Max
120
700
Units
mA
mW
Conditions
V
SS
= -5.5V, I
MOD
= I
BIAS
=
0mA, MK/NMK open circuit
V
SS
= -5.5V, I
MOD
= I
BIAS
=
0mA, R
LOAD
= 25Ω to GND,
MK/NMK terminated 50Ω to -2V
Table 7: Laser Driver DC Electrical Specifications
Symbol
I
BIAS
I
MOD
V
IB
V
IP
V
OCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min
2
2
—
—
Typ
—
—
—
—
GND -
3V
Max
100
100
V
SS
+
2.1
V
SS
+
2.1
—
Units
mA
mA
V
V
V
—
Conditions
—
I
BIAS
= 50mA
I
MOD
= 60mA
V
SS
= -5.2V
—
Table 8: Laser Driver AC Electrical Specifications
Symbol
t
R
, t
F
t
SU
t
H
Parameter
Output Rise and Fall Times
Data to Clock Setup Time
Hold Time
Min
—
—
20
Typ
—
50
50
Max
100
Units
ps
ps
ps
Conditions
25Ω load, 20%-80%,
20mA < I
MOD
< 60mA,
I
BIAS
= 60mA
90
—
—
—
Table 9: Package Thermal Specifications
Symbol
θ
JCC
Parameter
Thermal Resistance from Junction-to-Case
Min
—
Typ
25
Max
—
Units
°C/W
Conditions
Ceramic Package
G52201-0, Rev 3.0
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
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