VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
60
VR = 160 V
TJ = 125 °C
TJ = 25 °C
50
40
30
20
10
IF = 30 A
IF = 15 A
IF = 8 A
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
0
5
10
15
20
25
100
1000
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
25
200
VR = 160 V
TJ = 125 °C
TJ = 25 °C
20
15
10
5
160
120
80
IF = 30 A
IF = 15 A
IF = 8 A
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
DC
0
0
0
5
10
15
20
25
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 15-Aug-11
Document Number: 94080
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VISHAY [ VISHAY ]
