VS-MUR3020WTPbF, VS-MUR3020WT-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
35
-
Reverse recovery time
trr
22
ns
TJ = 125 °C
39
-
IF = 15 A
TJ = 25 °C
1.6
4.1
19
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
A
TJ = 125 °C
-
VR = 160 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
90
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
-
-
1.5
40
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and
greased
0.5
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
MUR3020WT
Revision: 15-Aug-11
Document Number: 94080
2
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