VS-60APH03-N3
Vishay Semiconductors
www.vishay.com
90
80
70
60
50
40
30
20
10
900
800
700
600
500
400
300
200
100
0
typical value
IF = 60 A, 125 °C
IF = 60 A, 125 °C
IF = 60 A, 25 °C
typical value
IF = 60 A, 25 °C
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 04-Jul-17
Document Number: 94796
4
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