VS-60APH03-N3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
28
-
-
-
-
-
-
-
-
34
Reverse recovery time
trr
ns
42
TJ = 125 °C
64
IF = 60 A
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
3.0
8.5
65
Peak recovery current
IRRM
A
VR = 200 V
Reverse recovery charge
Qrr
nC
273
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
0.56
-
0.80
40
-
°C/W
Thermal resistance,
junction to ambient
Typical socket mount
Typical thermal resistance,
case to heatsink
Mounting surface, flat, smooth, and greased
0.4
-
-
6.0
-
-
g
Approximate Weight
0.22
oz.
6.0
(12)
-
-
12
(10)
kgf. cm
(lbf.in)
Mounting torque
Marking device
Case style TO-247AC
60APH03
1000
1000
175 °C
100
10
150 °C
125 °C
100
TJ = 175 °C
100 °C
75 °C
1
50 °C
10
0.1
TJ = 125 °C
TJ = 25 °C
25 °C
0.01
0.001
1
0.3
0.6
0.9
1.2
1.5
50
100
150
200
250
300
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
VR - ReverseVoltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-Jul-17
Document Number: 94796
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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