VO3526
Power Phototriac
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
LED trigger current
Input reverse current
LED forward voltage
OUTPUT
VT = 6 V
R = 5 V
IF = 10 mA
IFT
IR
10
10
mA
µA
V
V
VF
0.9
1.4
Peak on-state voltage
I
TM = 1.5 A
VTM
1.7
100
25
V
V
DRM = 600 V,
A = 110 °C, 60 Hz
Repetitive peak off-state current
IDRM
µA
T
Holding current
RL = 100 Ω
IH
mA
Critical rate of rise of off-state voltage
V
IN = 400 V (fig. 3)
IN = 240 VRMS
IT = 1 ARMS (fig. 3)
dV/dt
210
0.9
V/µs
Critical rate of rise of commutating
voltage
V
,
dV/dt (c)
V/µs
Note
amb = 25 °C, unless otherwise specified.
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
RIN
RL RTEST
+
VIN
VIN
120 Ω
Mon
AC
RL
VCC
CTEST
-
5 V, VCC
0 V
dV/dt
dV/dt (c)
21575
Fig. 3 - dV/dt Test Circuit
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TEST CONDITION SYMBOL
MIN.
10
MAX.
20
UNIT
mA
Forward current at on-state
Input
IF(ON)
Forward current at off-state
IF(OFF)
0
0.1
mA
With snubber
VOUT(RMS)
Load supply voltage
240
V
(0.022 µF, 47 Ω)
Output
T
A = 40 °C
0.8
0.6
60
A
A
On 4-layer PCB
IOUT(RMS)
On-state RMS current
(RBA = 30 °C/W)
TA = 60 °C
Frequency
f
50
Hz
°C
Operating temperature
- 40
85
Document Number: 81842
Rev. 1.2, 23-Oct-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
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