New Product
SS1P3L, SS1P4L
Vishay General Semiconductor
100
10
1000
TJ = 150 °C
100
TJ = 25 °C
1
SS1P3L
SS1P4L
SS1P3L
SS1P4L
1
0.1
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
10
TJ = 150 °C
1000
100
10
SS1P3L
SS1P4L
TJ = 25 °C
SS1P3L
SS1P4L
1
1
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.050
(1.27)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Document Number: 88915
Revision: 19-Apr-11
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3
This document is subject to change without notice.
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