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SS1P3L-M3 参数 Datasheet PDF下载

SS1P3L-M3图片预览
型号: SS1P3L-M3
PDF下载: 下载PDF文件 查看货源
内容描述: [Low VF High Current Density Surface Mount Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 4 页 / 90 K
品牌: VISHAY [ VISHAY ]
 浏览型号SS1P3L-M3的Datasheet PDF文件第2页浏览型号SS1P3L-M3的Datasheet PDF文件第3页浏览型号SS1P3L-M3的Datasheet PDF文件第4页  
New Product  
SS1P3L, SS1P4L  
Vishay General Semiconductor  
Low VF High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMP® Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified  
DO-220AA (SMP)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.0 A  
30 V, 40 V  
50 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
EAS  
11.25 mJ  
0.35 V, 0.38 V  
150 °C  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
VF  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS1P3L  
13L  
SS1P4L  
14L  
UNIT  
Device marking code  
Maximum repetive peak reverse voltage  
VRRM  
IF(AV)  
30  
40  
V
A
TL = 140 °C  
Maximum average forward rectified current (fig. 1)  
TL = 135 °C  
1.0  
1.5  
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
50  
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C  
Voltage rate of change (rated VR)  
EAS  
11.25  
mJ  
V/μs  
°C  
dV/dt  
10 000  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 88915  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000