New Product
SiB455EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
1.0
25 °C, unless otherwise noted
10
-2
10
-3
0.8
I
GSS
- Gate Current (mA)
T
J
= 25 °C
0.6
I
GSS
- Gate Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
T
J
= 150 °C
T
J
= 25 °C
0.4
0.2
0.0
0
3
6
9
12
15
10
-10
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-Source Voltage
25
V
GS
= 5
V
thru 2.5
V
8
V
GS
= 2
V
15
I
D
- Drain Current (A)
10
Gate Current vs. Gate-Source Voltage
20
I
D
- Drain Current (A)
6
10
V
GS
= 1.5
V
5
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.16
8
Transfer Characteristics
I
D
=
8
A
0.12
V
GS
- Gate-to-Source
Voltage
(V)
R
DS(on)
- On-Resistance (Ω)
6
V
DS
= 6
V
4
V
DS
= 3
V
V
DS
= 9.6
V
0.08
V
GS
= 1.5
V
0.04
V
GS
= 1.8
V
V
GS
= 2.5
V
2
0.00
0
5
10
15
V
GS
= 4.5
V
20
25
0
0
5
10
15
20
25
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
www.vishay.com
3
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