Si9953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
1.0
On-Resistance vs. Gate-to-Source Voltage
10
I
S
– Source Current (A)
T
J
= 150_C
r
DS(on)
– On-Resistance (
Ω
)
0.8
I
D
= 2.3 A
0.6
T
J
= 25_C
0.4
0.2
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.8
30
Single Pulse Power
0.6
I
D
= 250
µA
25
V
GS(th)
Variance (V)
0.4
20
0.2
15
0.0
10
–0.2
5
0
–25
0
25
50
75
100
125
150
0.010
0.100
1
10
30
–0.4
–50
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
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Document Number: 70138
S-00652—Rev. K, 27-Mar-00
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