Si9953DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
–5 V, V
GS
= –10 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= 1 A
V
GS
= –4.5 V, I
D
= 0.5 A
V
DS
= –15 V, I
D
= –2.3 A
I
S
= –1.7 A, V
GS
= 0 V
–10
A
–1.5
0.12
0.22
2.5
–0.8
–1.2
0.25
0.40
W
S
V
–1.0
"100
–2
–25
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State Drain Current
b
I
D(on)
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
r
DS(on)
g
fs
V
SD
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
V
DS
= –10 V, V
GS
= –10 V I
D
= –2.3 A
10 V
10 V,
23
6.7
1.3
1.6
10
12
20
10
70
40
40
90
50
100
ns
25
nC
C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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S
FaxBack 408-970-5600
2
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
VISHAY [ VISHAY TELEFUNKEN ]
