Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
0.6
0.4
0.2
V
GS(th)
V
ariance (
V
)
0.0
- 0.2
- 0.4
- 0.6
10
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
− Temperature (°C)
Po
w
er (
W
)
30
I
D
= 250
µA
40
50
20
Threshold Voltage
100
r
DS(on)
Limited
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
P(t) = 0.0001
10
I
D
− Drain C
u
rrent (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25 °C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
P(t) = 10
dc
V
DS
− Drain-to-Source
Voltage
(V)
Safe Operating Area
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (sec)
3. T
JM
− T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73081
S-60790-Rev. B, 08-May-06
VISHAY [ VISHAY TELEFUNKEN ]
