Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.040
0.035
r
DS(on)
− On-Resistance (Ω)
C − Capacitance (pF)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
5
10
15
20
25
30
35
40
V
GS
= 4.5
V
25 °C unless noted
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
GS
= 10
V
I
D
− Drain Current (A)
V
DS
− Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
V
GS
− Gate-to-So
u
rce
V
oltage (
V
)
V
DS
= 15
V
I
D
= 12.6 A
r
DS(on)
− On-Resistance
(
N
ormalized)
1.8
V
GS
= 10
V
I
D
= 12.6 A
Capacitance
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (°C)
Gate Charge
50
0.030
On-Resistance vs. Junction Temperature
0.025
r
DS(on)
− On-Resistance (Ω)
I
S
− So
u
rce C
u
rrent (A)
I
D
= 2 A
I
D
= 12.6 A
T
J
= 150 °C
10
0.020
0.015
0.010
T
J
= 25 °C
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain
Voltage
(V)
V
GS
− Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
3
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