Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
Source-Drain Diode Forward Voltage
0.10
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
- On-Resistance (
W
)
0.08
0.06
0.04
I
D
= 10 A
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
0.6
0.4
0.2
V GS(th) Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
Threshold Voltage
80
Single Pulse Power
60
I
D
= 250
mA
Power (W)
40
20
- 25
0
25
50
75
100
125
150
0
0.01
0.10
Time (sec)
1.00
10.00
T
J
- Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
P
DM
t
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 50
_
C/W
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
30
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4
Document Number: 71726
S-40838—Rev. L, 03-May-04
VISHAY [ VISHAY TELEFUNKEN ]
