Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Output Characteristics
V
GS
= 10 V thru 4 V
50
Transfer Characteristics
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
30
20
20
T
C
= 125_C
25_C
10
3V
10
- 55_C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
0.030
0.025
r
DS(on)
- On-Resistance (W)
0.020
On-Resistance vs. Drain Current
3000
2500
C - Capacitance (pF)
2000
1500
1000
500
0
C
oss
C
rss
C
iss
Capacitance
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
0.005
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 10 A
V GS - Gate-to-Source Voltage (V)
8
r
DS(on)
- On-Resistance (W)
1.5
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 10 A
(Normalized)
6
1.0
4
2
0.5
0
0
8
16
24
32
40
0.0
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
3
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